Alan C. Seabaugh, professor of electrical engineering, Frank M. Freimann Director of the Midwest Institute for Nanoelectronics Discovery (MIND) and associate director of the Center for Nano Science and Technology at the University of Notre Dame, has been appointed to the editorial board of the Institute of Electrical and Electronics Engineering (IEEE) Transactions on Electron Devices.
One of the top 20 most cited journals in electrical and electronics engineering, the IEEE Transactions on Electron Devices publishes original contributions relating to the theory, design, performance and reliability of electron devices — past, present and future — from quantum-effect structures and emerging materials to integrated circuits and nanoscale devices.
Seabaugh has been active for a quarter century in the field of high-speed devices, spanning both industry and academia. His research contributions explore the physical limits of electronic materials devices and circuits with applications in computing, communications, imaging and energy conversion. As a member of the editorial board he will be addressing the growing number of editorial submissions dealing with nanotechnology and quantum devices and phenomena.
Seabaugh is a fellow of the IEEE and a member of both the IEEE Computer Society and the American Physical Society. He has authored and co-authored more than 200 publications, including three book chapters, and is the holder of 22 patents.
Prior to joining the University in 1999, he served as a senior fellow at Raytheon Systems Company, distinguished member of the technical staff at Texas Instruments and electronics engineer at the National Bureau of Standards.
Seabaugh earned his bachelor’s, master’s and doctoral degrees in electrical engineering from the University of Virginia.
Located at Notre Dame, MIND is one of only four Semiconductor Research Corporation’s Nanoelectronics Research Initiatives, searching for device technologies that can surpass the performance of the transistor in terms of size, speed, cost and energy efficiency — the next generation of electronic devices and basic building block of future computers. Notre Dame’s efforts in this area focus on field-effect tunneling transistors and nanomagnetic logic technology.